Characterization of ceramic PVD thin films on AZ31 magnesium alloys

Ceramic thin films have been widely used to protect the metal substrate as coatings in the past years. In order to improve the poor corrosion resistance of AZ31 magnesium alloy, the study in this paper used the electron beam evaporation method to prepare ceramic PVD films on its surface with TiO₂ and Al₂O₃ as donors, respectively. Atomic force microscopy (AFM), scanning electron microscope (SEM), energy dispersive X-ray spectrometer (EDS), Auger electron spectroscopy (AES) and X-ray diffraction (XRD) were used to investigate the surface morphology, composition and microstructure of the thin films. Both films deposited on AZ31 took on compact top surface morphologies and grew as amorphous structures on substrate. AES test not only showed that films compositions deviated the standard stoichiometric ratios, but also found that element Mg diffused into films and existed as magnesium oxide in the TiO_x film as well as the AlO_x film. In the electrochemical corrosion test, the AlO_x coating on AZ31 exhibited the largest electrochemical impedance in a 3.5% NaCl solution. But it did not show better corrosion resistance than others for the poorer adhesion. Even if its thickness was small, the TiO_x coating on AZ31 exhibited the best corrosion resistance in this study. According to the observation and analysis, the damage of these films on AZ31 in aggressive solutions was mainly due to the existence of pores, microcracks, vacancies and poor adhesion between coating and substrate.     

LD端抽运平直腔Nd:YVO4固态激光器的输出功率特性研究

对LD端抽运平直腔Nd:YVO₄固态激光器输出功率特性受激光器内在诸因素(热透镜效应、腔长、激活孔径等)的制约关系进行了研究.并用传播圆-变换圆图解分析方法给出了合理的解释，同时，对进一步提高其输出功率特性指出了方向. 关键词： 固体激光器 热透镜 变换圆 平直腔     

Generalized KKM Type Theorems in FC-Spaces with Applications (I)

The class KKM(X,Y) (resp., s-KKM(X,Y,Z)) of set-valued mappings with KKM (resp., s-KKM) property is introduced in FC-spaces without any convexity structure. Some generalized KKM (resp., s-KKM) type theorems are proved in FC-spaces under much weak assumptions. As applications, some new section theorems and coincidence theorems are established in FC-spaces. These theorems generalize many known results in literature. The further applications of these results will be given in a follow-up paper.     

A family of skew Hadamard difference sets

In 1933 a family of skew Hadamard difference sets was described by Paley using matrix language and was called the Paley-Hadamard difference sets in the literature. During the last 70 years, no new skew Hadamard difference sets were found. It was conjectured that there are no further examples of skew Hadamard difference sets. This conjecture was proved to be true for the cyclic case in 1954, and further progress in favor of this conjecture was made in the past 50 years. However, the conjecture remains open until today. In this paper, we present a family of new perfect nonlinear (also called planar) functions, and construct a family of skew Hadamard difference sets using these perfect nonlinear functions. We show that some of the skew Hadamard difference sets presented in this paper are inequivalent to the Paley-Hadamard difference sets. These new examples of skew Hadamard difference sets discovered 70 years after the Paley construction disprove the longstanding conjecture on skew Hadamard difference sets. The class of new perfect nonlinear functions has applications in cryptography, coding theory, and combinatorics.     

1.54μmEr3+,Yb3+共掺玻璃激光器的速率方程及数值分析

LD抽运共掺Er,Yb玻璃激光器中的跃迁过程较复杂,针对双掺离子之间的能量传递和Er3+的多种跃迁过程,给出了详细的准三能级系统的速率方程,在合理简化后进行了数值分析,分析了Er3+掺杂浓度和介质长度、抽运光斑、输出镜透过率、谐振腔长、抽运光的椭圆度等因素对激光阈值及斜率效率的影响. 关键词： 1.54μm激光 Er3+玻璃 速率方程 数值分析     

压印光刻中的两步对正技术

压印光刻中套刻需要粗、精两级对正.实验采用一对斜纹结构光栅作为对正标记.利用物镜组观察光栅标记图像的边界特征进行粗对正,其准确度在精对正信号的捕捉范围内；利用光电接收器件阵列组合接收光栅莫尔信号，在莫尔信号的线区进行精对正.由于线性区的斜率大, 精对正过程中得到相应x,y方向的对正误差信号灵敏度高,利用高灵敏度对正误差信号作为控制系统的驱动信号,对承片台进行驱动定位,实现精对正.最终使X,Y方向上的重复对正准确度分别达到了± 21 nm(± 3σ)和±24 nm(± 3σ).     

长波长大应变InGaAs/InGaAsP分布反馈激光器的材料生长与器件制备

采用低压金属有机化合物气相沉积法(LP-MOCVD)生长并制作了1.6—1.7μm大应变InGaAs/InGaAsP分布反馈激光器.采用应变缓冲层技术，得到质量良好的大应变InGaAs/InP体材料.器件采用了4个大应变的量子阱，加入了载流子阻挡层改善器件的温度特性.1.66μm和1.74μm未镀膜的3μm脊型波导器件阈值电流低(小于15mA)，输出功率高(100mA时大于14mW).从10—40℃，1.74μm激光器的特征温度T₀=57K，和1.55μm InGaAsP分布反馈激光器的特征温度相当. 关键词： MOCVD InGaAs/InGaAsP 应变量子阱 分布反馈激光器     

八信道高温超导多路器的实验研究

文中首先分析八信道高温超导多路器设计的方案,以及实现八信道高温超导多路器的技术;给出了用MgO基片为衬底,YBCO超导膜制备的高温超导滤波器设计仿真曲线及实际测试曲线;并对多路器所用制冷器的制冷量进行了计算;最后给出八信道高温超导多路器的实际测试曲线。     

玻璃中CdSeS纳米晶体的生长及其性能

对掺有镉、硒、硫的玻璃在500—800℃退火2—24h,生长了不同尺寸的CdSxSe1x纳米晶体.用分光光度计和光致发光光谱(PL)分析了纳米晶体的性能.退火温度低于550℃,纳米晶体处于成核阶段,600—625℃处于正常扩散生长阶段,700—800℃处于竞争生长阶段;而650℃处于两种生长阶段之间.虽然650℃下生长的纳米晶体的尺寸分布比较窄,但纳米晶体的尺寸随退火时间的延长几乎不变,在该温度改变退火时间很难改变纳米晶体的平均尺寸.在所有样品中出现了深能级缺陷,在650℃退火时间小于4h或大于16h有利 关键词： 纳米晶体 生长机理 深能级缺陷